Ursprungsort
United States
Modellnummer
PSMN015-110P,127
Technology
MOSFET (MetalOxide)
Drain to Source Voltage (Vdss)
110 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 25 V
Current Transfer Ratio (Max)
Standard37
Serial Interfaces
Standard31
Current - Peak Output
Standard28
Voltage - Off State
Standard38
Current Transfer Ratio (Min)
Standard36
Frequency - Switching
Standard20
Voltage - Supply (Max)
Standard15
Voltage - Output
Standard32
Resistance (Ohms)
Standard25
Operating Temperature
-55°C ~ 175°C (TJ)
Static dV/dt (Min)
Standard39
Voltage - Supply (Min)
Standard14
Voltage - Isolation
Standard33
Current - LED Trigger (Ift) (Max)
Standard40
Voltage - Breakdown
Standard19
Current - Supply
Standard26
Size / Dimension
Standard34
Type
Single FETs, MOSFETs
Current - Output / Channel
Standard22
Frequency - Max
Standard18
Current - DC Forward (If) (Max)
Standard35
Current - Output High, Low
Standard27
Current - On State (It (RMS)) (Max)
Standard41
